Datasheet BSM10GD120DN2 - Infineon IGBT MODULE, 1200 V, ECONOPACK3

Part Number: BSM10GD120DN2

Detailed Description

Manufacturer: Infineon

Description: IGBT MODULE, 1200 V, ECONOPACK3

Docket:
BSM 10 GD 120 DN2
IGBT Power Module
· Power module · 3-phase full-bridge · Including fast free-wheel diodes · Package with insulated metal base plate Type BSM 10 GD 120 DN2 BSM 10 GD120DN2E3224 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 k Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.

Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis Ptot 80 + 150 -40 ... + 125 1.52 2 2500 16 11 F 40 / 125 / 56 sec Vac mm K/W °C ICpuls 30 20 W VGE IC 15 10 Symbol VCE VCGR 1200 ± 20 A Values 1200 Unit V VCE IC Package ECONOPACK 2 ECONOPACK 2K Ordering Code C67076-A2513-A67 C67070-A2513-A67
1200V 15A 1200V 15A
1

Specifications:

Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Voltage Vces: 3.2 V
Current Ic Continuous a Max: 15 A
Current Temperature: 80°C
DC Collector Current: 15 A
Full Power Rating Temperature: 25°C
Module Configuration: Six
Mounting Type: Solder
Number of Pins: 17
Number of Transistors: 6
Operating Temperature Range: -40°C to +125°C
Package / Case: Econopack 3
Power Dissipation Max: 80 W
Power Dissipation Pd: 80 W
Power Dissipation: 80 W
Pulsed Current Icm: 30 A
Transistor Case Style: Econopack 3
Transistor Type:
Voltage Vce Sat Typ: 2.7 V
Voltage Vces: 1.2kV

RoHS: Yes