Datasheet FD900R12IP4D - Infineon IGBT, HIG POW, 1200 V, 900 A

Detailed Description

Manufacturer: Infineon

Description: IGBT, HIG POW, 1200 V, 900 A

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Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 1.7 V
• DC Collector Current: 900 A
• Module Configuration: Single
• Number of Pins: 10
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation Max: 5.1 kW
• Transistor Case Style: Module
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• DAVICO - D 25-10
• TE Connectivity - 0-0160170-0