Datasheet FP10R12W1T4_B3 - Infineon IGBT, LOW POW, 1200 V, 10 A, EASYPIM

Detailed Description

Manufacturer: Infineon

Description: IGBT, LOW POW, 1200 V, 10 A, EASYPIM

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Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 1.85 V
• DC Collector Current: 10 A
• Number of Pins: 20
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation Max: 105 W
• Transistor Case Style: Module
• Transistor Polarity: N Channel

RoHS: Yes