Datasheet FP75R12KE3 - Infineon IGBT MODULE, 1200 V, ECONOPIM

Detailed Description

Manufacturer: Infineon

Description: IGBT MODULE, 1200 V, ECONOPIM

Download Data Sheet

Docket:
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FP75R12KE3
Elektrische Eigenschaften / Electrical properties
Hцchstzulдssige Werte / Maximum rated values

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 2.3 V
• Current Ic Continuous a Max: 105 A
• DC Collector Current: 105 A
• Forward Current If(AV): 75 A
• Forward Surge Current Ifsm Max: 500 A
• Module Configuration: Seven
• Mounting Type: Solder
• Number of Pins: 24
• Operating Temperature Range: -40°C to +125°C
• Package / Case: Econopim 2
• Power Dissipation Max: 350 W
• Power Dissipation Ptot Max: 350 W
• Power Dissipation: 350 W
• Pulsed Current Icm: 150 A
• Repetitive Reverse Voltage Vrrm Max: 1600 V
• Transistor Case Style: EconoPIM 2
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 1.2 kV

RoHS: Yes