Datasheet SEMIX 101GD126HDS - Semikron IGBT MODULE, 1200 V, 6 PACK

Detailed Description

Manufacturer: Semikron

Description: IGBT MODULE, 1200 V, 6 PACK

Application Note

Docket:
SEMiX® - Technical Explanations
SEMiX
®
IGBT Modules & Bridge Rectifier Family Technical Explanations
Version 2.0 / January 2008 Christian Daucher

Specifications:

• Av Current Ic: 120 A
• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 2.15 V
• Current Ic Continuous a Max: 120 A
• Current Ic Continuous b Max: 85 A
• Current Temperature: 25°C
• DC Collector Current: 130 A
• External Depth: 61.7 mm
• External Width: 137.8 mm
• Fixing Centres: 50 mm
• Fixing Hole Diameter: 5.4 mm
• Module Configuration: Six
• Mounting Type: Screw
• Number of Pins: 20
• Number of Transistors: 6
• Operating Temperature Range: -40°C to +150°C
• Package / Case: SEMiX 13s
• Pulsed Current Icm: 120 A
• Rise Time: 39 ns
• SMD Marking: SEMiX13s
• Transistor Case Style: SEMiX 13s
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 1.2 kV
• Voltage: 1.2 kV

RoHS: Yes