Datasheet SEMIX603GAR066HDS - Semikron IGBT MODULE, 2X600V
Part Number: SEMIX603GAR066HDS
Detailed Description
Manufacturer: Semikron
Description: IGBT MODULE, 2X600V
Docket:
SEMiX 603GB066HDs
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMiX®3s Trench IGBT Modules
SEMiX 603GB066HDs SEMiX 603GAL066HDs SEMiX 603GAR066HDs Preliminary Data Module Inverse Diode
Features
Specifications:
- Av Current Ic: 790 A
- Collector Emitter Voltage V(br)ceo: 1 V
- Collector Emitter Voltage Vces: 1.9 V
- Current Ic Continuous a Max: 790 A
- DC Collector Current: 790 A
- Forward Surge Current Ifsm Max: 1800 A
- Module Configuration: Single
- Mounting Type: Screw
- Number of Pins: 17
- Operating Temperature Range: -40°C to +175°C
- Package / Case: SEMiX 3s
- Pulsed Current Icm: 1200 A
- Repetitive Reverse Voltage Vrrm Max: 600 V
- Rise Time: 145 ns
- Transistor Case Style: SEMiX 3s
- Transistor Polarity: N Channel
- Transistor Type:
- Voltage Vces: 600 V
RoHS: Yes