Datasheet SEMIX653GB176HDS - Semikron IGBT MODULE, 2X1700V

Detailed Description

Manufacturer: Semikron

Description: IGBT MODULE, 2X1700V

Download Data Sheet

Docket:
SEMiX 653GB176HDs
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMiX® 3s Trench IGBT Modules
SEMiX 653GB176HDs SEMiX 653GAL176HDs SEMiX 653GAR176HDs Preliminary Data Module Inverse Diode
Features

Specifications:

• Av Current Ic: 650 A
• Collector Emitter Voltage V(br)ceo: 1.2 V
• Collector Emitter Voltage Vces: 2.45 V
• Current Ic Continuous a Max: 650 A
• DC Collector Current: 619 A
• Forward Surge Current Ifsm Max: 2900 A
• Mounting Type: Screw
• Number of Pins: 16
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SEMiX 3s
• Pulsed Current Icm: 900 A
• Repetitive Reverse Voltage Vrrm Max: 1700 V
• Rise Time: 90 ns
• Transistor Case Style: SEMiX 3s
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 1700 V

RoHS: Yes