Datasheet DIM200WHS12-A000 - Dynex IGBT, HALF-BRIDGE 200 A 1200 V

Detailed Description

Manufacturer: Dynex

Description: IGBT, HALF-BRIDGE 200 A 1200 V

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Docket:
DIM200WHS12-A000
DIM200WHS12-A000
Half Bridge IGBT Module
Replaces December 2003 version, issue DS5671-2.2 DS5671-3.0 February 2004
FEATURES

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 2.7 V
• Current Ic @ Vce Sat: 200 A
• Current Ic Continuous a Max: 200 A
• Current Temperature: 80°C
• Fall Time tf: 50 ns
• Full Power Rating Temperature: 25°C
• Number of Transistors: 2
• Package / Case: W
• Power Dissipation Pd: 1.39 kW
• Power Dissipation: 1.39 kW
• Pulsed Current Icm: 400 A
• Rise Time: 95 ns
• Transistor Polarity: N Channel
• Voltage Vces: 1.2 kV

RoHS: Yes

Other Names:

DIM200WHS12A000, DIM200WHS12 A000