Datasheet IKW25N120H3 - Infineon IGBT+ DIODE, 1200 V, 25 A, TO247

Detailed Description

Manufacturer: Infineon

Description: IGBT+ DIODE, 1200 V, 25 A, TO247

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Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 2.4 V
• DC Collector Current: 25 A
• Number of Pins: 3
• Operating Temperature Range: -40°C to +175°C
• Power Dissipation Max: 326 W
• Transistor Case Style: TO-247

RoHS: Yes

Accessories:

• AAVID THERMALLOY - BW50-2G
• CT CONCEPT - 2SC0435T2A0-17
• Fuji Electric - 7MBP25RA-120-55