Datasheet FZT849 - Diodes TRANSISTOR, NPN, SOT-223

Detailed Description

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-223

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Docket:
SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR
ISSUE 3 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36m at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp * Ptot =3 Watts PARTMARKING DETAILS COMPLEMENTARY TYPE FZT849 FZT949
FZT849
C
E C B

Manufacturer Catalogue

Docket:
Design Note 16 Issue 2 June 1995
Low Drop Out Linear Regulators
FZT949
+5V + 7.2 to 5.2V
Unreg.

input

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 30 V
• Collector Emitter Voltage Vces: 50 mV
• Continuous Collector Current Ic Max: 7 A
• Current Ic Continuous a Max: 7 A
• Current Ic hFE: 7 A
• DC Collector Current: 7 A
• DC Current Gain hFE: 200
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Typ: 100 MHz
• Hfe Min: 100
• Mounting Type: SMD
• Number of Pins: 4
• Number of Transistors: 1
• Package / Case: SOT-223
• Power Dissipation Pd: 3 W
• Power Dissipation Ptot Max: 3 W
• Pulsed Current Icm: 20 A
• SMD Marking: FZT849
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-223
• Transistor Polarity: NPN
• Voltage Vcbo: 80 V

RoHS: Yes