Datasheet ZTX853 - Diodes TRANSISTOR, NPN, E-LINE

Detailed Description

Manufacturer: Diodes

Description: TRANSISTOR, NPN, E-LINE

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Docket:
NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
ISSUE 3 - NOVEMBER 1995 FEATURES * 100 Volt VCEO * 4 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Ptot=1.2 Watts
ZTX853
C B
E

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• Collector Emitter Voltage Vces: 200 mV
• Continuous Collector Current Ic Max: 4 A
• Current Ic @ Vce Sat: 4 A
• Current Ic Continuous a Max: 4 A
• Current Ic hFE: 2 A
• DC Collector Current: 4 A
• DC Current Gain hFE: 200
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Typ: 130 MHz
• Hfe Min: 100
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +200°C
• Package / Case: E-Line
• Power Dissipation Pd: 1.2 W
• Power Dissipation Ptot Max: 1.2 W
• Pulsed Current Icm: 10 A
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: E-Line
• Transistor Polarity: NPN
• Voltage Vcbo: 200 V

RoHS: Yes