Datasheet ZXTN2010GTA - Diodes TRANSISTOR, NPN, SOT-223

Detailed Description

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-223

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Docket:
ZXTN2010G
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION
Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
FEATURES

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 80 V
• Collector Emitter Voltage Vces: 30 mV
• Current Ic Continuous a Max: 6 A
• DC Collector Current: 6 A
• DC Current Gain hFE: 200
• Gain Bandwidth ft Typ: 130 MHz
• Hfe Min: 100
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 1.6 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-223
• Transistor Polarity: NPN

RoHS: Yes