Datasheet ZXTN2040F - Diodes TRANSISTOR, NPN, SOT-23

Detailed Description

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-23

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Docket:
ZXTN2040F SOT23 40 volt NPN silicon planar medium power transistor
Summary
V(BR)CEO > 40V Ic(cont) = 1A Vce(sat) < 500mV @ 1A
Complementary type
ZXTP2041F

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 40 V
• Collector Emitter Voltage Vces: 200 mV
• Continuous Collector Current Ic Max: 1 A
• Current Gain Hfe Max: 900
• Current Ic Continuous a Max: 1 A
• Current Ic hFE: 1 mA
• Current Ic hfe -Do Not Use See ID 1182: 1 mA
• DC Collector Current: 1 A
• DC Current Gain Hfe Max: 900
• DC Current Gain Hfe Min: 300
• DC Current Gain hFE: 300
• Gain Bandwidth ft Typ: 150 MHz
• Hfe Min: 300
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 350 mW
• Power Dissipation Ptot Max: 350 mW
• SMD Marking: N40
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 8 mm
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN
• Voltage Vcbo: 40 V

RoHS: Yes