Datasheet ZXTN25020DFLTA - Diodes TRANSISTOR, NPN, SOT-23

Detailed Description

Manufacturer: Diodes

Description: TRANSISTOR, NPN, SOT-23

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Docket:
ZXTN25020DFL 20V, SOT23, NPN low power transistor
Summary
BVCEX > 100V BVCEO > 20V BVECO > 5V IC(cont) = 2A ICM = 8A VCE(sat) < 70mV @ 1A RCE(sat) = 55m PD = 350mW Complementary part number ZXTP25020DFL
Description
Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 20 V
• Collector Emitter Voltage Vces: 225 mV
• Continuous Collector Current Ic Max: 2 A
• Current Ib: 500 mA
• Current Ic Continuous a Max: 4.5 A
• Current Ic hFE: 2 A
• Gain Bandwidth ft Typ: 215 MHz
• Hfe Min: 220
• Mounting Type: SMD
• Package / Case: SOT-23
• Power Dissipation Pd: 350 mW
• Power Dissipation Ptot Max: 350 mW
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN
• Turn Off Time: 63.9 ns
• Turn On Time: 72.2 ns
• Voltage Vcbo: 100 V

RoHS: Yes