Datasheet ZXTP25040DFLTA - Diodes TRANSISTOR, PNP, SOT-23

Detailed Description

Manufacturer: Diodes

Description: TRANSISTOR, PNP, SOT-23

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Docket:
ZXTP25040DFL 40V, SOT23, PNP low power transistor
Summary
BVCEO > -40V BVECO > -3V IC(cont) = -1.5A VCE(sat) < -115mV @ 1A RCE(sat) = 82m PD = 350mW Complementary part number ZXTN25040DFL
Description
Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 40 V
• Collector Emitter Voltage Vces: 0.185 V
• Continuous Collector Current Ic Max: 1.5 A
• Current Ib: 0.5 A
• Current Ic Continuous a Max: -3 A
• Current Ic hFE: 1.5 A
• Gain Bandwidth ft Typ: 190 MHz
• Hfe Min: 170
• Mounting Type: SMD
• Package / Case: SOT-23
• Power Dissipation Ptot Max: 0.35 W
• Power Dissipation: 350 mW
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-23
• Transistor Polarity: PNP
• Transistor Type: Low Power Bipolar
• Turn Off Time: 130 ns
• Turn On Time: 108 ns
• Voltage Vcbo: 130 V

RoHS: Yes