Datasheet BCR523 - Infineon TRANSISTOR, DIGITAL, SOT-23

Detailed Description

Manufacturer: Infineon

Description: TRANSISTOR, DIGITAL, SOT-23

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Docket:
BCR523
NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=1k , R2=10k )
C 3
3
Thermal Resistance Junction - soldering point1) RthJS

Simulation Model

Specifications:

• Av Current Ic: 500 mA
• Collector Emitter Voltage V(br)ceo: 50 V
• Collector Emitter Voltage Vces: 300 mV
• Continuous Collector Current Ic Max: 500 mA
• Current Ic Continuous a Max: 500 mA
• DC Collector Current: 500 mA
• DC Current Gain Min: 70
• DC Current Gain Typ: 70
• DC Current Gain: 5 mA
• Full Power Rating Temperature: 79°C
• Gain Bandwidth ft Typ: 100 MHz
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Package / Case: SOT-23
• Pin Format: 1B, 2E, 3C
• Power Dissipation Pd: 330 mW
• Power Dissipation Ptot Max: 330 mW
• Resistance R1: 1 kOhm
• Resistance R2: 10 kOhm
• SMD Marking: XGs
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN
• Transistor Type: Bias Resistor (BRT)
• Voltage Vcbo: 50 V
• Voltage Vi on @ Ic 2mA: 0.4 V
• Voltage Vi on: 12 V

RoHS: Yes