Datasheet NTE129P - NTE Electronics BIPOLAR TRANSISTOR, PNP, -80 V

Detailed Description

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, PNP, -80 V

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Docket:
NTE128P (NPN) & NTE129P (PNP) Silicon Complementary Transistors General Purpose Amp
Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications.

Features: D High VCE Ratings D Exceptional Power Dissipation Capability Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector­Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter­Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current , IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Power Dissipation, PTOT TA = +25°

Specifications:

• Collector Emitter Voltage V(br)ceo: 80 V
• DC Collector Current: -1 A
• DC Current Gain Max (hfe): 300
• Power Dissipation Pd: 850 mW
• Transistor Polarity: PNP
• Transition Frequency Typ ft: 50 MHz