Datasheet NTE232 - NTE Electronics BIPOLAR TRANSISTOR, PNP, -30 V

Detailed Description

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, PNP, -30 V

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Docket:
NTE232 Silicon PNP Transistor Darlington Amplifier, Preamp
Description: The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type package designed for preamplifier input applications where high impedance is a requirement.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector­Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter­Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector­Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 30 V
• DC Collector Current: 300 mA
• DC Current Gain Max (hfe): 800
• Power Dissipation Pd: 625 mW
• Transistor Polarity: PNP
• Transition Frequency Typ ft: 125 MHz

RoHS: Yes