Datasheet NTE2347 - NTE Electronics BIPOLAR TRANSISTOR, NPN, 80 V, TO-39

Detailed Description

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, NPN, 80 V, TO-39

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Docket:
NTE2347 Silicon NPN Transistor General Purpose, Medium Power
Description: The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current, fast switching applications and for power amplifiers.

Absolute Maximum Ratings: Collector­Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector­Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter­Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation, Ptot TA +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC

Specifications:

• Collector Emitter Voltage V(br)ceo: 80 V
• DC Collector Current: 5 A
• DC Current Gain Max (hfe): 40
• Power Dissipation Pd: 1 W
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 50 MHz

RoHS: Yes