Datasheet NTE2365 - NTE Electronics BIPOLAR TRANSISTOR, NPN, 800 V

Detailed Description

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, NPN, 800 V

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Docket:
NTE2365 Silicon NPN Transistor High Voltage Horizontal Deflection Output TO3PBL Type Package
Features: D High Speed: tf = 100ns typ D High Reliability D High Breakdown Voltage: VCBO = 1500V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 800 V
• DC Collector Current: 15 A
• DC Current Gain Max (hfe): 8
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 180 W
• Transistor Polarity: NPN

RoHS: Yes