Datasheet NTE269 - NTE Electronics BIPOLAR TRANSISTOR, PNP, -50 V

Detailed Description

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, PNP, -50 V

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Docket:
NTE268 (NPN) & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier
Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require ment, low power lamp and relay drivers and power drivers for high-current applications such as volt age regulators.

Features: D Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 1.5A D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: -50 V
• DC Collector Current: 4 A
• DC Current Gain Max (hfe): 2000
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 40 W
• Transistor Polarity: PNP