Datasheet NTE397 - NTE Electronics BIPOLAR TRANSISTOR, PNP, -300 V, TO-39

Detailed Description

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, PNP, -300 V, TO-39

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Docket:
NTE397 Silicon PNP Transistor Power Amplifier & High Speed Switch (Compl to NTE396)
Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector­Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Emitter­Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25°C . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: -300 V
• DC Collector Current: -1 A
• DC Current Gain Max (hfe): 30
• Operating Temperature Range: -65°C to +200°C
• Power Dissipation Pd: 10 W
• Transistor Polarity: PNP

RoHS: Yes