Datasheet PBSS4160V,115 - NXP TRANS NPN 60 V 1 A LOW SAT SOT666

Detailed Description

Manufacturer: NXP

Description: TRANS NPN 60 V 1 A LOW SAT SOT666

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Docket:
PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
Rev.

03 -- 11 December 2009 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Collector Emitter Voltage V(br)ceo: 60 V
• Collector Emitter Voltage Vces: 110 mV
• Current Ic Continuous a Max: 100 mA
• DC Collector Current: 900 mA
• DC Current Gain Min: 250
• DC Current Gain: 400
• Gain Bandwidth ft Typ: 220 MHz
• Mounting Type: SMD
• Number of Pins: 6
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-666
• Power Dissipation: 300 mW
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-666
• Transistor Polarity: NPN
• Transistor Type: Low Saturation (BISS)
• Transition Frequency Typ ft: 220 MHz

RoHS: Yes

Other Names:

PBSS4160V115, PBSS4160V 115