Datasheet PBSS4350D - NXP TRANSISTOR, NPN, SOT-457

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR, NPN, SOT-457

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 50 V
• Collector Emitter Voltage Vces: 90 V
• Continuous Collector Current Ic Max: 3 A
• Current Ic @ Vce Sat: 50 mA
• Current Ic Continuous a Max: 3 A
• DC Collector Current: 3 A
• DC Current Gain Min: 300
• DC Current Gain: 500 mA
• Device Marking: 43
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Typ: 100 MHz
• Mounting Type: SMD
• Number of Pins: 6
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-457
• Power Dissipation Pd: 600 mW
• Power Dissipation Ptot Max: 750 mW
• Power Dissipation per device Max: 750 mW
• SMD Marking: 43
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-457
• Transistor Polarity: NPN
• Voltage Vcbo: 60 V

RoHS: Yes

Accessories:

• Electrolube - SMA10SL
• LICEFA - V11-7-6-10
• LICEFA - V11-7