Datasheet PDTC123EE,115 - NXP TRANS NPN W/RES SOT-416

Detailed Description

Manufacturer: NXP

Description: TRANS NPN W/RES SOT-416

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 k
Product data sheet Supersedes data of 2004 Mar 18 2004 Aug 06
NXP Semiconductors

Specifications:

• Collector Emitter Voltage V(br)ceo: 50 V
• Collector Emitter Voltage Vces: 150 mV
• Current Ic Continuous a Max: 10 mA
• DC Collector Current: 100 mA
• DC Current Gain Min: 30
• DC Current Gain: 30
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-416
• Power Dissipation: 150 mW
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-416
• Transistor Polarity: NPN
• Transistor Type: General Purpose

RoHS: Yes

Other Names:

PDTC123EE115, PDTC123EE 115