Datasheet PBRN123ET - NXP TRANSISTOR, NPN, 40 V, 0.8 A, SOT-23

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR, NPN, 40 V, 0.8 A, SOT-23

Download Data Sheet

Docket:
PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k, R2 = 2.2 k
Rev.

01 -- 27 February 2007 Product data sheet
1. Product profile
1.1 General description

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 40 V
• Collector Emitter Voltage Vces: -1.15 V
• Continuous Collector Current Ic Max: 800 mA
• Current Ic Continuous a Max: 800 mA
• DC Current Gain Min: 350
• Mounting Type: SMD
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-23 (TO-236)
• Power Dissipation Pd: 250 mW
• Resistance R1: 2.2 kOhm
• Resistance R2: 2.2 kOhm
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-23
• Transistor Polarity: NPN
• Transistor Type: General Purpose

RoHS: Yes

Accessories:

• Roth Elektronik - RE901