Datasheet BUX87P - NXP TRANSISTOR, NPN, SOT-82

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR, NPN, SOT-82

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Docket:
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX86P BUX87P
GENERAL DESCRIPTION

Specifications:

• Collector Emitter Voltage V(br)ceo: 450 V
• Collector Emitter Voltage Vces: 800 mV
• Continuous Collector Current Ic Max: 500 mA
• Current Ic Continuous a Max: 500 mA
• DC Collector Current: 500 mA
• DC Current Gain Min: 450
• DC Current Gain: 100 mA
• Fall Time @ Ic: 0.28 µs
• Lead Spacing: 2.29 mm
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• Package / Case: SOT-82
• Power Dissipation Pd: 42 W
• Power Dissipation Ptot Max: 42 W
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-82
• Transistor Polarity: NPN
• Voltage Vces: 1 kV

RoHS: Yes