PDF, 149 Kb, Language: en, File published: Mar 18, 2003, Pages: 8
PNP switching transistor
Extract from the document
DISCRETE SEMICONDUCTORS DATA SHEET
dbook, halfpage M3D088 MMBT3906
PNP switching transistor
Product data sheet
Supersedes data of 2000 Apr 11 2003 Mar 18 NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 FEATURES QUICK REFERENCE DATA • Collector current capability IC = −200 mA SYMBOL • Collector-emitter voltage VCEO = −40 V. VCEO collector-emitter voltage −40 V IC collector current (DC) −200 mA PARAMETER MAX. UNIT APPLICATIONS
• General switching and amplification. PINNING
PIN DESCRIPTION DESCRIPTION 1 base PNP switching transistor in a SOT23 plastic package.
NPN complement: MMBT3904. 2 emitter 3 collector MARKING
handbook, halfpage MARKING CODE(1) TYPE NUMBER
MMBT3906 3
3 7B∗
1 Note
1. ∗ = p: Made in Hong Kong. 2 ∗ = t: Made in Malaysia. 1 ∗ = W: Made in China. 2 Top view MAM256 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −6 V IC collector current (DC) − −200 mA ICM peak collector current − −200 mA IBM peak base current − −100 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note
1. Transistor mounted on an FR4 printed-circuit board. 2003 Mar 18 2 NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 THERMAL CHARACTERISTICS
SYMBOL
Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 500 K/W Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −30 V − −50 nA IEBO emitter cut-off current IC = 0; VEB = −6 V − −50 nA hFE DC current gain VCE = −1 V; see Fig.2
IC = −0.1 mA 60 − IC = −1 mA 80 − IC = −10 mA 100 300 IC = −50 mA 60 − IC = −100 mA 30 − VCEsat collector-emitter saturation …
