Datasheet PBSS5320T - NXP TRANSISTOR, PNP, SOT-23

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR, PNP, SOT-23

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 20 V
• Collector Emitter Voltage Vces: 70 V
• Continuous Collector Current Ic Max: 2 A
• Current Ic @ Vce Sat: 500 A
• Current Ic Continuous a Max: 2 A
• DC Collector Current: 2 A
• DC Current Gain Min: 220
• DC Current Gain: 500 mA
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 100 MHz
• Gain Bandwidth ft Typ: 100 MHz
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 300 mW
• Power Dissipation Ptot Max: 480 mW
• SMD Marking: ZH
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-23
• Transistor Polarity: PNP
• Voltage Vcbo: 20 V

RoHS: Yes

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