Datasheet 2N5302G - ON Semiconductor TRANSISTOR, NPN, TO-3

Detailed Description

Manufacturer: ON Semiconductor

Description: TRANSISTOR, NPN, TO-3

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Docket:
2N5302 High-Power NPN Silicon Transistor
High-power NPN silicon transistors are for use in power amplifier and switching circuits applications.
Features http://onsemi.com
· Low Collector-Emitter Saturation Voltage - ·
VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc Pb-Free Package is Available*

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 60 V
• Collector Emitter Voltage Vces: 750 mV
• Current Ic Continuous a Max: 30 A
• DC Collector Current: 30 A
• DC Current Gain Min: 5
• DC Current Gain: 60 mA
• Gain Bandwidth ft Typ: 2 MHz
• Mounting Type: Through Hole
• Number of Pins: 2
• Package / Case: TO-204AA
• Power Dissipation Pd: 200 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-204AA
• Transistor Polarity: NPN

RoHS: Yes