Datasheet 2N5550G - ON Semiconductor TRANSISTOR, AMPLIFIER

Detailed Description

Manufacturer: ON Semiconductor

Description: TRANSISTOR, AMPLIFIER

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Docket:
2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features

Specifications:

• Collector Emitter Voltage V(br)ceo: 140 V
• Collector Emitter Voltage Vces: 60 V
• Current Ic Continuous a Max: 600 mA
• DC Collector Current: 600 mA
• DC Current Gain Min: 250
• DC Current Gain: 100
• Gain Bandwidth ft Typ: 100 MHz
• Mounting Type: Through Hole
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-92
• Power Dissipation Pd: 625 mW
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-92
• Transistor Polarity: NPN
• Transistor Type: General Purpose

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5