Datasheet BUV22G - ON Semiconductor TRANSISTOR

Detailed Description

Manufacturer: ON Semiconductor

Description: TRANSISTOR

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Docket:
BUV22 SWITCHMODEt Series NPN Silicon Power Transistor
This device is designed for high speed, high current, high power applications.
Features http://onsemi.com
· High DC Current Gain: · Low VCE(sat), VCE(sat)
hFE min = 20 at IC = 10 A max = 1.0 V at IC = 10 A TF max = 0.35 ms at IC = 20 A

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 250 V
• Collector Emitter Voltage Vces: 1.5 V
• Current Ic Continuous a Max: 40 A
• DC Collector Current: 40 A
• DC Current Gain Min: 10
• DC Current Gain: 8
• Gain Bandwidth ft Typ: 8 MHz
• Mounting Type: Through Hole
• Number of Pins: 2
• Package / Case: TO-3
• Power Dissipation Pd: 250 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-3
• Transistor Polarity: NPN

RoHS: Yes

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