Datasheet MJ15001G - ON Semiconductor BIPOLAR

ON Semiconductor MJ15001G

Part Number: MJ15001G

Detailed Description

Manufacturer: ON Semiconductor

Description: BIPOLAR

Docket:
MJ15001 (NPN), MJ15002 (PNP) Complementary Silicon Power Transistors
The MJ15001 and MJ15002 are EpiBaset power transistors designed for high power audio, disk head positioners and other linear applications.
Features http://onsemi.com
· High Safe Operating Area (100% Tested) - 5.0 A @ 40 V · · ·
0.5 A @ 100 V For Low Distortion Complementary Designs High DC Current Gain - hFE = 25 (Min) @ IC = 4 Adc Pb-Free Packages are Available*

Simulation Model

Specifications:

Collector Emitter Voltage V(br)ceo: 140 V
Collector Emitter Voltage Vces: 1 V
Current Ic Continuous a Max: 15 A
DC Collector Current: 15 A
DC Current Gain Min: 25
DC Current Gain: 25
Gain Bandwidth ft Typ: 2 MHz
Mounting Type: Through Hole
Number of Pins: 2
Operating Temperature Range: -65°C to +200°C
Package / Case: TO-204
Power Dissipation Pd: 200 mW
SVHC: No SVHC (15-Dec-2010)
Transistor Case Style: TO-204
Transistor Polarity: NPN

RoHS: Yes

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