Datasheet MJE13003G - ON Semiconductor TRANSISTOR, NPN, TO-126
Part Number: MJE13003G
Detailed Description
Manufacturer: ON Semiconductor
Description: TRANSISTOR, NPN, TO-126
Docket:
MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.
Features http://onsemi.com
· Reverse Biased SOA with Inductive Loads @ TC = 100_C · Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C · 700 V Blocking Capability · SOA and Switching Applications Information · Pb-Free Package is Available*
MAXIMUM RATINGS
Specifications:
- Application Code: PHVS
- Av Current Ic: 1.5 A
- Collector Emitter Voltage V(br)ceo: 400 V
- Collector Emitter Voltage Vces: 1 V
- Continuous Collector Current Ic Max: 1.5 A
- Current Ic @ Vce Sat: 1 A
- Current Ic Continuous a Max: 1.5 A
- DC Collector Current: 1.5 A
- DC Current Gain Min: 5
- DC Current Gain: 1 mA
- Device Marking: MJE13003
- Fall Time @ Ic: 0.7 µs
- Fall Time tf: 700 ms
- Full Power Rating Temperature: 25°C
- Gain Bandwidth ft Min: 4 MHz
- Gain Bandwidth ft Typ: 10 MHz
- Mounting Type: Through Hole
- Number of Pins: 3
- Number of Transistors: 1
- Package / Case: TO-126
- Power Dissipation Pd: 1.4 W
- Power Dissipation Ptot Max: 40 W
- SVHC: No SVHC (15-Dec-2010)
- Transistor Case Style: TO-126
- Transistor Polarity: NPN
- Voltage Vcbo: 10 V DC
- Voltage Vce Sat @ Ic NPN Max: 1 V
- Voltage Vceo Max: 400 V
- Voltage Vces: 700 V
RoHS: Yes
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