Datasheet MJD3055T4G - ON Semiconductor BIPOLAR TRANSISTOR, NPN, 60 V

Detailed Description

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR, NPN, 60 V

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Docket:
MJD2955 (PNP) MJD3055 (NPN) Complementary Power Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose amplifier and low speed switching applications.
Features

Specifications:

• Collector Emitter Voltage V(br)ceo: 60 V
• DC Collector Current: 10 A
• DC Current Gain Max (hfe): 20
• Power Dissipation Pd: 20 W
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 2 MHz

RoHS: Yes