Datasheet MJE3439G - ON Semiconductor BIPOLAR TRANSISTOR, NPN, 350 V, TO-225

Detailed Description

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR, NPN, 350 V, TO-225

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Docket:
MJE3439 NPN Silicon High-Voltage Power Transistor
This device is designed for use in line-operated equipment requiring high fT.
Features http://onsemi.com
· High DC Current Gain - hFE = 40-160 @ IC · · ·
= 20 mAdc Current Gain Bandwidth Product - fT = 15 MHz (Min) @ IC = 10 mAdc Low Output Capacitance - Cob = 10 pF (Max) @ f = 1.0 MHz Pb-Free Package is Available*

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 350 V
• DC Collector Current: 300 mA
• DC Current Gain Max (hfe): 15
• Power Dissipation Pd: 15 W
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 15 MHz

RoHS: Yes