Datasheet NJT4031NT1G - ON Semiconductor BIPOLAR TRANSISTOR, NPN, 40 V, SOT-223

Detailed Description

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR, NPN, 40 V, SOT-223

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Docket:
NJT4031N Bipolar Power Transistors
NPN Silicon
Features
· Collector -Emitter Sustaining Voltage - · · · · · ·
VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - hFE = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.150 Vdc (Max) @ IC = 1.0 Adc = 0.300 Vdc (Max) @ IC = 3.0 Adc SOT-223 Surface Mount Packaging Epoxy Meets UL 94, V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 40 V
• DC Collector Current: 3 A
• DC Current Gain Max (hfe): 215
• Power Dissipation Pd: 2 W
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 215 MHz

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 217-36CTRE6