Datasheet BC373G - ON Semiconductor DARLINGTON TRANSISTOR, TO-92

ON Semiconductor BC373G

Part Number: BC373G

Detailed Description

Manufacturer: ON Semiconductor

Description: DARLINGTON TRANSISTOR, TO-92

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Docket:
BC372, BC373 High Voltage Darlington Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 BASE 2 Symbol VCEO BC372 BC373 Collector -Base Voltage BC372 BC373 Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCES 100 80 12 1.0 625 5.0 1.5 12 -55 to +150 Vdc Adc mW mW/°C W mW/°C °C BC37x = Device Code x = 2 or 3 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) 12 3 TO-92 CASE 29 STYLE 1 BC 37x AYWW G G 100 80 Vdc Value Unit Vdc EMITTER 1
· Pb-Free Packages are Available*

Specifications:

  • Av Current Ic: 1 A
  • Collector Emitter Voltage V(br)ceo: 80 V
  • Collector Emitter Voltage Vces: 1.1 V
  • Continuous Collector Current Ic Max: 1 A
  • Current Ic Continuous a Max: 1 A
  • DC Collector Current: 1 A
  • DC Current Gain Min: 10000
  • DC Current Gain: 100 mA
  • Device Marking: BC373
  • Full Power Rating Temperature: 25°C
  • Gain Bandwidth ft Min: 100 MHz
  • Gain Bandwidth ft Typ: 200 MHz
  • Hfe NPN Device @ IC Min: 0.1
  • Mounting Type: Through Hole
  • Number of Pins: 3
  • Number of Transistors: 1
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-92
  • Pin Configuration: b
  • Power Dissipation Pd: 625 mW
  • Power Dissipation Ptot Max: 625 mW
  • SVHC: No SVHC (15-Dec-2010)
  • Transistor Case Style: TO-92
  • Transistor Polarity: NPN
  • Transistor Type: Darlington
  • Voltage Vcbo: 80 V
  • Voltage Vceo Max: 80 V

RoHS: Yes