Datasheet MBT35200MT1G - ON Semiconductor BIPOLAR, TRANSISTOR

Detailed Description

Manufacturer: ON Semiconductor

Description: BIPOLAR, TRANSISTOR

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Docket:
MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications
MAXIMUM RATINGS (TA = 25°C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max -35 -55 -5.0 -2.0 -5.0 Unit Vdc Vdc Vdc Adc A 3 BASE 4 EMITTER COLLECTOR 1, 2, 5, 6
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35 VOLTS 2.0 AMPS PNP TRANSISTOR

Specifications:

• Collector Emitter Voltage V(br)ceo: 35 V
• Collector Emitter Voltage Vces: 200 mV
• DC Collector Current: 2 A
• DC Current Gain Min: 400
• DC Current Gain: 200
• Gain Bandwidth ft Typ: 100 MHz
• Number of Pins: 6
• Operating Temperature Range: -55°C to +150°C
• Package / Case: 6-TSOP
• Power Dissipation: 625 mW
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: TSOP
• Transistor Polarity: PNP
• Transition Frequency Typ ft: 100 MHz

RoHS: Yes