Datasheet MJ11021G - ON Semiconductor TRANSISTOR

Detailed Description

Manufacturer: ON Semiconductor

Description: TRANSISTOR

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Docket:
MJ11021(PNP) MJ11022 (NPN) Complementary Darlington Silicon Power Transistors
Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications.
Features http://onsemi.com
· High dc Current Gain @ 10 Adc - hFE = 400 Min (All Types) · Collector-Emitter Sustaining Voltage · Low Collector-Emitter Saturation
VCE(sat) VCEO(sus) = 250 Vdc (Min) - MJ11022, 21 = 1.0 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A 100% SOA Tested @ VCE = 44 V IC = 4.0 A t = 250 ms Pb-Free Packages are Available*

Specifications:

• Collector Emitter Voltage V(br)ceo: 250 V
• Collector Emitter Voltage Vces: 2 V
• DC Collector Current: 15 A
• DC Current Gain Min: 0.4
• DC Current Gain: 15
• Number of Pins: 2
• Operating Temperature Range: -65°C to +175°C
• Package / Case: TO-204
• Power Dissipation Pd: 150 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-204
• Transistor Polarity: PNP

RoHS: Yes

Accessories:

• Fischer Elektronik - AKK 191
• Multicomp - MK3301/S