Datasheet MJE253G - ON Semiconductor TRANSISTOR, DUAL, PNP, TO-225

ON Semiconductor MJE253G

Part Number: MJE253G

Detailed Description

Manufacturer: ON Semiconductor

Description: TRANSISTOR, DUAL, PNP, TO-225

Docket:
MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors
These devices are designed for low power audio amplifier and low-current, high-speed switching applications.
Features http://onsemi.com
· High Collector-Emitter Sustaining Voltage - · High DC Current Gain @ IC = 200 mAdc · · · ·
VCEO(sus) = 100 Vdc (Min) hFE = 40 -200 = 40 -120 Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc High Current Gain Bandwidth Product - fT = 40 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB Pb-Free Packages are Available*

Simulation Model

Specifications:

Collector Emitter Voltage V(br)ceo: 100 V
Collector Emitter Voltage Vces: 300 mV
Current Ic Continuous a Max: 1 A
DC Collector Current: 4 A
DC Current Gain Min: 15
DC Current Gain: 180 mA
Gain Bandwidth ft Typ: 40 MHz
Mounting Type: Through Hole
Number of Pins: 3
Package / Case: TO-225
Power Dissipation Pd: 1.5 W
SVHC: No SVHC (15-Dec-2010)
Transistor Case Style: TO-225
Transistor Polarity: PNP

RoHS: Yes