Datasheet MJD117-1G - ON Semiconductor DARLINGTON TRANSISTOR, PNP, -100 V, D-PAK

Detailed Description

Manufacturer: ON Semiconductor

Description: DARLINGTON TRANSISTOR, PNP, -100 V, D-PAK

Simulation Model

Specifications:

• Collector Emitter Voltage, V(br)ceo: 100 V
• DC Collector Current: -2 A
• DC Current Gain Max (hfe): 12
• Power Dissipation, Pd: 20 W
• Transistor Polarity: PNP
• Transition Frequency Typ, ft: 25 MHz

RoHS: Yes

Other Names:

MJD1171G, MJD117 1G