Datasheet MJD253-1G - ON Semiconductor POWER TRANSISTOR, PNP, -100 V, D-PAK

Detailed Description

Manufacturer: ON Semiconductor

Description: POWER TRANSISTOR, PNP, -100 V, D-PAK

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• DC Collector Current: -4 A
• DC Current Gain Max (hfe): 40
• Power Dissipation Pd: 12.5 W
• Transistor Polarity: PNP
• Transition Frequency Typ ft: 40 MHz

RoHS: Yes

Other Names:

MJD2531G, MJD253 1G