Datasheet MJE271G - ON Semiconductor BIPOLAR TRANSISTOR, PNP, -100 V, TO-225

Detailed Description

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR, PNP, -100 V, TO-225

Download Data Sheet

Docket:
MJE270 (NPN), MJE271 (PNP) Complementary Silicon Power Transistors
Features
· High Safe Operating Area · · ·
http://onsemi.com
IS/B @ 40 V, 1.0 s = 0.375 A Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) Pb-Free Packages are Available*

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• DC Collector Current: 2 A
• DC Current Gain Max (hfe): 1500
• Power Dissipation Pd: 1.5 W
• Transistor Polarity: P Channel
• Transition Frequency Typ ft: 6 MHz

RoHS: Yes