Datasheet 2STA1962 - STMicroelectronics TRANSISTOR, PNP TO-3P

Detailed Description

Manufacturer: STMicroelectronics

Description: TRANSISTOR, PNP TO-3P

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Docket:
2STA1962
High power PNP epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = -230 V Complementary to 2STC5242 Fast-switching speed Typical fT = 30 MHz
3 2 1

Specifications:

• Collector Emitter Voltage V(br)ceo: 230 V
• Collector Emitter Voltage Vces: 3 V
• Continuous Collector Current Ic Max: 15 A
• Current Ic Continuous a Max: 8 A
• DC Collector Current: 8 A
• DC Current Gain Min: 80
• DC Current Gain: 1 A
• Gain Bandwidth ft Typ: 30 MHz
• Mounting Type: Through Hole
• Number of Pins: 3
• Package / Case: TO-3P
• Power Dissipation Pd: 130 W
• Power Dissipation Ptot Max: 130 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-3P
• Transistor Polarity: PNP
• Voltage Vcbo: 230 V

RoHS: Yes