Datasheet MJE802 - STMicroelectronics Darlington Bipolar Transistor

Detailed Description

Manufacturer: STMicroelectronics

Description: Darlington Bipolar Transistor

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Docket:
Power bipolar transistors
Selection guide
December 2005
www.st.com/bipolar
Electronic light ballast design-in guidelines

Simulation Model

Specifications:

• Collector Current @ hfe: 1.5 A
• Collector Emitter Voltage, V(br)ceo: 80 V
• DC Collector Current: 4 A
• DC Current Gain Max (hfe): 750
• Number of Pins: 3
• Power Dissipation, Pd: 40 W
• Transistor Polarity: NPN

RoHS: Yes