Datasheet DMN100-7-F - Diodes MOSFET, N CH, 30 V, 1.1 A, SC-59

Detailed Description

Manufacturer: Diodes

Description: MOSFET, N CH, 30 V, 1.1 A, SC-59

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Docket:
DMN100
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
· · · · · · · Extremely Low On-Resistance: 170m @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate "Green" Device (Note 3)
Mechanical Data

Specifications:

• Continuous Drain Current Id: 1.1 A
• Current Id Max: 4 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 240 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SC-59
• Power Dissipation: 500 mW
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SC-59
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Other Names:

DMN1007F, DMN100 7 F