Datasheet ZVN4106F - Diodes MOSFET, N, SOT-23

Detailed Description

Manufacturer: Diodes

Description: MOSFET, N, SOT-23

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Docket:
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 ­ DECEMBER 1995 PARMARKING DETAIL - MZ
ZVN4106F
S
D G

Simulation Model

Specifications:

• Continuous Drain Current Id: 200 mA
• Current Id Max: 200 mA
• Current Temperature: 25°C
• Device Marking: ZVN4106F
• Drain Source Voltage Vds: 60 V
• External Depth: 2.5 mm
• External Length / Height: 1.12 mm
• External Width: 3.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 2.5 Ohm
• Package / Case: SOT-23
• Power Dissipation Pd: 330 mW
• Power Dissipation Ptot Max: 330 mW
• Pulse Current Idm: 3 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: MZ
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 8 mm
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 3 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V

RoHS: Yes