Datasheet ZVP2106A - Diodes MOSFET, P, E-LINE

Detailed Description

Manufacturer: Diodes

Description: MOSFET, P, E-LINE

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Docket:
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 ­ MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=5
ZVP2106A
D G
S

Simulation Model

Specifications:

• Continuous Drain Current Id: 320 mA
• Current Id Max: 320 mA
• Current Temperature: 25°C
• Device Marking: ZVP2106A
• Drain Source Voltage Vds: 60 V
• Full Power Rating Temperature: 25°C
• Lead Spacing: 1.27 mm
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 4 Ohm
• Package / Case: E-Line
• Power Dissipation Pd: 700 mW
• Power Dissipation Ptot Max: 700 mW
• Pulse Current Idm: 5 A
• Rds(on) Test Voltage Vgs: -10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: -3.5 V
• Transistor Case Style: E-Line
• Transistor Polarity: P Channel
• Voltage Vds Typ: -60 V
• Voltage Vgs Max: -3.5 V
• Voltage Vgs Rds on Measurement: -10 V

RoHS: Yes

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