Datasheet ZXM61P02F - Diodes MOSFET, P, SOT-23

Detailed Description

Manufacturer: Diodes

Description: MOSFET, P, SOT-23

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Docket:
ZXM61P02F
20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=-20V; RDS(ON)=0.60 ; ID=-0.9A
DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage, power management applications. FEATURES · · · · · · · · · Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 package
SOT23

Simulation Model

Specifications:

• Continuous Drain Current Id: 900 mA
• Current Id Max: 900 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 20 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 600 MOhm
• On State Resistance Max: 600 MOhm
• Package / Case: SOT-23
• Power Dissipation Pd: 625 W
• Power Dissipation Ptot Max: 625 W
• Pulse Current Idm: 4.9 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SMD Marking: P02
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: -700 mV
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vds Typ: -20 V
• Voltage Vgs Max: -700 mV
• Voltage Vgs Rds on Measurement: -4.5 V
• Voltage Vgs th Min: -0.7 V

RoHS: Yes